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IXFH 22N60P IXFV22N60P
IXFV 22N60PS
Symbol
Test Conditions
Characteristic Values
TO-247 AD (IXFH) Outline
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
g fs
V DS = 20 V; I D = 0.5 I D25 , pulse test
15
20
S
C iss
C oss
V GS = 0 V, V DS = 25 V, f = 1 MHz
3600
305
pF
pF
1
2
3
C rss
t d(on)
38
20
pF
ns
t r
t d(off)
V GS = 10 V, V DS = 0.5 V DSS , I D = I D25
R G = 4 ? (External)
20
60
ns
ns
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
t f
23
ns
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Q g(on)
Q gs
Q gd
R thJC
R thCS
V GS = 10 V, V DS = 0.5 V DSS , I D = 0.5 I D25
58
20
22
0.21
nC
nC
nC
0.31 ° C/W
° C/W
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
E 15.75 16.26
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
e 5.20 5.72
L 19.81 20.32
L1 4.50
0.205 0.225
.780 .800
.177
Source-Drain Diode
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Min. Typ. Max.
? P 3.55 3.65
Q 5.89 6.40
R 4.32 5.49
S 6.15 BSC
.140 .144
0.232 0.252
.170 .216
242 BSC
I S
V GS = 0 V
22
A
I SM
V SD
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
66
1.5
A
V
PLUS220 (IXFV) Outline
t rr
Q RM
I F = 26A
-di/dt = 100 A/ μ s
V R = 100V, V GS = 0 V
1.0
200
ns
μ C
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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